Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs
| Autor: | G. Massari, Enrico Zanoni, Gaudenzio Meneghesso, D. Buttari, Massimo Maretto |
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| Předmět: |
Materials science
business.industry Spice pulsed measurements Semiconductor device modeling High-electron-mobility transistor Gallium Arsenide HEMT Charge Trapping SPICE simulations Circuit modeling Gallium arsenide chemistry.chemical_compound chemistry Hardware_INTEGRATEDCIRCUITS Equivalent circuit Optoelectronics business Gate current Transmission-line pulse |
| Zdroj: | Scopus-Elsevier |
| Popis: | We measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for on-state breakdown of HEMTs, suitable for SPICE simulations, which is capable of predicting the breakdown curves. We have shown that a parasitic bipolar action can give rise in HEMTs to a new form of breakdown, which is accurately modeled by the SPICE equivalent circuit. The model not only predicts I/sub G/, but consistently describes I/sub D/ up to breakdown levels. |
| Databáze: | OpenAIRE |
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