Effect of annealing and hydrogen plasma treatment on the luminescence and persistent photoconductivity of polycrystalline ZnO films
| Autor: | A. A. Markhabaeva, Giancarlo Cicero, S. E. Kumekov, Kh. A. Abdullin, L.V. Gritsenko |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Electron mobility
Photoluminescence Materials science business.industry Annealing (metallurgy) Photoconductivity Analytical chemistry General Physics and Astronomy 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Optoelectronics Metalorganic vapour phase epitaxy Thin film 0210 nano-technology business Luminescence |
| Zdroj: | Journal of Applied Physics. 121:245303 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4989826 |
| Popis: | Photoluminescence (PL) and electrical properties of boron doped zinc oxide (ZnO) thin films, deposited by metalorganic chemical vapour deposition on a glass substrate, were investigated. The effects of annealing in air, as well as the influence of the radiofrequency—plasma treatment in hydrogen atmosphere, on the PL and electrical conductivity of the ZnO films were studied. A correlation between photoluminescence and electrical properties during annealing was observed. Hydrogen plasma treatment causes an increase in the carrier mobility and concentration and results in a very intensive near band edge emission (NBE). It was found that defects responsible for the dramatic increase in the intensity of NBE band in the hydrogen-treated ZnO films are hydrogen-related complexes formed near or at the surface of the samples. The intensity of NBE in hydrogen-treated samples decreases after aging in the dark, and, conversely, the NBE intensity increases under UV light illumination. This effect is fully reversible and depends on the gas atmosphere during the UV exposure and subsequent aging. It was proposed that the NBE band in the ZnO films annealed in the air and treated in hydrogen plasma emerges due to O-H complexes forming at zinc vacancy sites, n(O-H)-VZn. |
| Databáze: | OpenAIRE |
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