Chemical mapping of InGaN MQWs
| Autor: | Paul Thomas, Koen Jacobs, Zahia Bougrioua, Adam R. Boyd, Nikhil Sharma, Ted Thrush, Jan Cheyns, Laurence Considine, Colin J. Humphreys, D. M. Tricker, Ingrid Moerman |
|---|---|
| Přispěvatelé: | IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Department of Materials Science and Metallurgy [Cambridge University] (DMSM), University of Cambridge [UK] (CAM) |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
[PHYS]Physics [physics]
Materials science business.industry Condensed Matter Physics Epitaxy Dark field microscopy Crystallographic defect law.invention Inorganic Chemistry Optics Annular dark-field imaging law Materials Chemistry Metalorganic vapour phase epitaxy Thin film Dislocation business Light-emitting diode |
| Zdroj: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2001, 230 (3-4), pp.438-441. ⟨10.1016/S0022-0248(01)01252-0⟩ |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/S0022-0248(01)01252-0⟩ |
| Popis: | International audience; High power LEDs fabricated from InGaN/GaN layers have received much research interest. Hence, in this paper we identify structural and chemical defects resulting from the epitaxial growth of these layers, which directly effect the performance of the device. TEM, annular dark field imaging (ADF), energy filtered TEM (EFTEM) and X-ray mapping were used to study multiple quantum wells structures capped with a p-type GaN layer. TEM and ADF studies of the samples show a number of V-defects which are roughly 100–200 nm apart along the MQW. Each V-defect incorporates a pure edge (b=1/3) dislocation, which runs through the apex of the V-defect up to the free surface. These V-defects contain GaN with no InGaN layers, suggesting that the capping layer has filled in the open V-defects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect