Electrostatic Doping and Devices
| Autor: | Hueting, Raymond J.E., Gupta, Gaurav, Rudan, Massimo, Brunetti, Rossella, Reggiani, Susanna |
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| Přispěvatelé: | Power Electronics, MESA+ Institute |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Springer Handbook of Semiconductor Devices, 371-389 STARTPAGE=371;ENDPAGE=389;TITLE=Springer Handbook of Semiconductor Devices Springer Handbook of Semiconductor Devices ISBN: 9783030798260 |
| Popis: | Electrostatic doping is widely emerging as an alternative approach to overcome the limitations of traditional chemical doping to provide high charge carrier densities in nanometer-scale semiconductor devices. In this chapter (this work is partly based on Gupta et al. (IEEE Trans Electron Devices 64(8):3044–3055, 2017) and has been expanded with latest insights and developments), various reported approaches on electrostatic doping and related device architectures in different material systems are discussed. It is shown that for the induced electrostatic doping, the role of the metal workfunction, specific semiconductor properties (i.e., electron affinity and energy bandgap), the applied electric field, and the interplay between them are important. The effect of interface traps on the induced charge is also highlighted. In addition, both the performance benefits and major bottlenecks of electrostatic doping for potential future CMOS technology are discussed. |
| Databáze: | OpenAIRE |
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