LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors
| Autor: | Mohammad Samizadeh Nikoo, Taifang Wang, Elison Matioli, Luca Nela |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Gate dielectric 02 engineering and technology Dielectric High-electron-mobility transistor 01 natural sciences 7. Clean energy gan nio law.invention law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Breakdown voltage linio 010302 applied physics Negative-bias temperature instability business.industry 020208 electrical & electronic engineering Transistor Wide-bandgap semiconductor trigate hemt Hysteresis Optoelectronics normally-off business enhancement-mode |
| Zdroj: | 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| DOI: | 10.23919/ispsd50666.2021.9452252 |
| Popis: | In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (PLD) LiNiO resulted in e-mode devices without the need for special epitaxial layers, barrier recess, or regrowth. The LiNiO Tri-Gate devices presented a positive Vth, low Ron, large maximum on-current (Ion, max ), and high breakdown voltage (Vbr) simultaneously. LiNiO also yielded excellent negative bias temperature instability (NBTI) performance, small hysteresis, and small frequency dispersion. |
| Databáze: | OpenAIRE |
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