Amorphous Gallium Phosphate Thin Films : Ga and O K-Edge Absorption Spectroscopy
| Autor: | Pascale Armand, E. Philippot, Alain Ibanez, F. Tourtin, G. Tourillon |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1997 |
| Předmět: |
010302 applied physics
Absorption spectroscopy Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Gallium phosphate XANES Amorphous solid chemistry.chemical_compound Crystallography chemistry [PHYS.HIST]Physics [physics]/Physics archives 0103 physical sciences Thin film Absorption (chemistry) Gallium 0210 nano-technology |
| Zdroj: | Journal de Physique IV Proceedings Journal de Physique IV Proceedings, EDP Sciences, 1997, 7 (C2), pp.C2-975-C2-977. ⟨10.1051/jp4:19972106⟩ |
| ISSN: | 1155-4339 1764-7177 |
| Popis: | Amorphous dielectric gallium phosphate thin films of various compositions are obtained on silicon substrate by the pyrosol process. We report, in this paper, the results of a structural characterization of these deposits. The atomic surroundings of gallium atoms have been determined by a Ga K-edge X-ray absorption study. Oxygen K-edge XANES measurements, completed by O 1s, were carried out in order to probe the oxygen environment. In phosphorous-rich thin films, gallium atoms are in mixed surroundings constituted by both tetrahedral environment. In phosphorous-rich thin films, gallium atoms are in mixed surroundings constituted by both tetrahedral GaO 4 and octahedral GaO 6 sites. The oxygen atoms are divalent, and we pointed out the coexistence of Ga-O-P and P-O-P linkages. In gallium-enriched deposits, GaO 6 sites are predominant. The oxygen atoms are mainly dicoordinated to gallium ones, while some are non-bridging. |
| Databáze: | OpenAIRE |
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