The hall effect in Fe submonolayer systems on n-and p-type Si(111)

Autor:	D. L. Goroshko, S. Ts. Krivoshchapov, A. V. Konchenko, E. S. Zakharova, N. G. Galkin
Rok vydání:	2000
Předmět:	Adsorption Materials science Condensed matter physics Electrical resistivity and conductivity Hall effect Annealing (metallurgy) Magnet Monolayer Electron Condensed Matter Physics Thermal conduction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials
Zdroj:	Scopus-Elsevier
ISSN:	1090-6479 1063-7826
DOI:	10.1134/1.1188076
Popis:	The in situ Hall effect measurements at room temperature showed that formation of the atomically clean Si(111) 7×7 surface as a result of high-temperature annealing (T=1250°C, t=120–180 s) of n-Si reverses the majority carrier sign at the surface, and a hole-enriched layer is formed at the p-Si surface. The different dynamics of Hall and resistivity voltage variations within the first monolayer of iron adsorbed onto substrates with a p-n junction or with a hole-enriched layer is not related to conduction over the adsorbed layer. Conduction in the Fe layer of thickness exceeding three monolayers is caused in both cases by the transport of electrons with densities 2×1013–2×1014 cm−2 and mobilities 65–90 cm2/(V s).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4efb816ab3591abd91ede784f35abba https://doi.org/10.1134/1.1188076 Zobrazit plný text záznamu Plný text ve formátu PDF