Chemical vapor sensing of two-dimensional MoS2 field effect transistor devices
| Autor: | Berend T. Jonker, Glenn G. Jernigan, Enrique Cobas, Adam L. Friedman, Aubrey T. Hanbicki, F. Keith Perkins, Paul M. Campbell |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Fabrication Light sensitivity Graphene Band gap Transistor Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Carbon nanotube Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention law Monolayer Hardware_INTEGRATEDCIRCUITS Materials Chemistry Field-effect transistor Electrical and Electronic Engineering Hardware_LOGICDESIGN |
| Zdroj: | ResearcherID |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2014.06.013 |
| Popis: | MoS 2 , in single to few-layer format, is of interest because of its potential for advanced transistor and sensor applications. Its sizable bandgap enables single layer transistors with large on/off current ratios, and the large surface-to-volume ratio provides sensitive transduction of surface physisorption to the channel conductivity. Here, we discuss aspects of transistor device fabrication and of chemical vapor sensing experiments. We expose MoS 2 chemical sensors to a variety of analytes, find the largest response to triethylamine, a nerve gas by-product, and explain our results based on a donor–acceptor model. We show that our MoS 2 sensors provide comparable sensitivity and much higher selectivity than other low-dimensional sensors such as carbon nanotube and graphene chemical sensors. We present results for back-gated sensing and light sensitivity for our monolayer MoS 2 sensors, and compare the results with multilayer MoS 2 sensors. |
| Databáze: | OpenAIRE |
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