The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
| Autor: | Wilfried Vandervorst, Komal Pandey, Thomas Hantschel, Chris Drijbooms, Kristof Paredis |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Spreading resistance profiling Ion beam MIGRATION chemistry.chemical_element lcsh:Medicine 02 engineering and technology INDUCED LATERAL DAMAGE AMORPHIZATION 01 natural sciences Focused ion beam Characterization and analytical techniques Article Techniques and instrumentation CRYSTALLINE SI Nanoscience and technology 0103 physical sciences Microscopy Electronic devices DEACTIVATION Gallium SILICON lcsh:Science 010302 applied physics Science & Technology Multidisciplinary Dopant business.industry lcsh:R DEFECTS 021001 nanoscience & nanotechnology Amorphous solid Multidisciplinary Sciences Nanoscale devices RESOLUTION chemistry SIMULATION Science & Technology - Other Topics Optoelectronics lcsh:Q IMPLANTATION 0210 nano-technology business Current density |
| Zdroj: | Scientific Reports, Vol 10, Iss 1, Pp 1-15 (2020) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the region of interest on a sample cross section. In this work, we investigate the impact of the focused ion beam milling on spreading resistance analysis and we show that the electrical effect of the focused ion beam extends far beyond the amorphous region and depends on the dopant concentration, ion beam energy, impact angle, and current density. For example, for dopant concentrations between 1.0 × 1020 and 1.5 × 1016 cm−3 we observe dopant deactivation at least between 23 and 175 nm for a glancing 30 keV ion beam. Further, we show that dopant deactivation is caused by defect diffusion during milling and is not directly impacted by the presence of Gallium in the sample. Later, we also discuss potential ways to mitigate these effects. |
| Databáze: | OpenAIRE |
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