Tunable spin-valley coupling in layered polar Dirac metals
| Autor: | Hideaki Sakai, H. Murakawa, Masashi Tokunaga, Masakazu Matsubara, Atsushi Miyake, Kazuhiko Kuroki, Masaki Kondo, Tatsuhiro Kojima, Ryosuke Kurihara, Daiki Sekine, Masayuki Ochi, Noriaki Hanasaki |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Dirac (software)
FOS: Physical sciences 02 engineering and technology Electronic structure 01 natural sciences Condensed Matter - Strongly Correlated Electrons symbols.namesake Transition metal 0103 physical sciences General Materials Science 010306 general physics Materials of engineering and construction. Mechanics of materials Spin-½ Coupling Physics Condensed Matter::Quantum Gases Condensed Matter - Materials Science Strongly Correlated Electrons (cond-mat.str-el) Spin polarization Condensed matter physics Materials Science (cond-mat.mtrl-sci) Fermi surface 021001 nanoscience & nanotechnology Dirac fermion Mechanics of Materials symbols TA401-492 Condensed Matter::Strongly Correlated Electrons 0210 nano-technology |
| Zdroj: | Communications Materials, Vol 2, Iss 1, Pp 1-7 (2021) |
| ISSN: | 2662-4443 |
| Popis: | In non-centrosymmetric metals, spin-orbit coupling (SOC) induces momentum-dependent spin polarization at the Fermi surfaces. This is exemplified by the valley-contrasting spin polarization in monolayer transition metal dichalcogenides (TMDCs) with in-plane inversion asymmetry. However, the valley configuration of massive Dirac fermions in TMDCs is fixed by the graphene-like structure, which limits the variety of spin-valley coupling. Here, we show that the layered polar metal BaMn$X_2$ ($X =$Bi, Sb) hosts tunable spin-valley-coupled Dirac fermions, which originate from the distorted $X$ square net with in-plane lattice polarization. We found that in spite of the larger SOC, BaMnBi$_2$ has approximately one-tenth the lattice distortion of BaMnSb$_2$, from which a different configuration of spin-polarized Dirac valleys is theoretically predicted. This was experimentally observed as a clear difference in the Shubnikov-de Haas oscillation at high fields between the two materials. The chemically tunable spin-valley coupling in BaMn$X_2$ makes it a promising material for various spin-valleytronic devices. Comment: 25 pages, 4 figures. Published in Communications Materials |
| Databáze: | OpenAIRE |
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