Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node
| Autor: | Giovanni Nastasi, Amen Allah Guizani, Faouzi Nasri, Vittorio Romano, Mohamed Fadhel Ben Aissa, Houssem Rezgui, Hafedh Belmabrouk, Salah Rahmouni |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
nanoscale electrothermal transport Materials science Acoustics and Ultrasonics business.industry Node (networking) enhanced thermal stability phonon confinement Soi finfet Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials SOI FinFETs self-heating effects Optoelectronics business Nanoscopic scale electron mobility |
| Popis: | A flexible framework is obtained for enhancing both the thermal and electrical performance of fin field-effect transistor (FinFET) technology. Investigation of the nanoscale heat conduction within a short-channel field-effect transistor can be regarded as an emerging challenge related to future-generation transistors. In this work, we report the electrothermal transport in a 10 nm silicon-on-insulator (SOI) FinFET based on the dual-phase-lag model and modified drift-diffusion motions. We found that electron mobility decreases along the channel due to carrier confinement under higher electric field. In addition, the surface detection temperature indicates that the self-heating process is localized between the source and drain region. As promising results, high-κ metal-oxide and lower thermal boundary resistance can optimize the nanoscale heat transport in the SOI FinFET device. |
| Databáze: | OpenAIRE |
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