Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 'high k' and 2 metal deposition techniques
| Autor: | Virginie Loup, Claudia Wiemer, Mikael Casse, Christine Morin, S. Minoret, Xavier Garros, Sandrine Lhostis, K. Dabertrand, Michele Perego, Vincent Cosnier, Pascal Besson, L. Vandroux, J-M. Pedini, Marco Fanciulli |
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| Přispěvatelé: | Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle, Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2007 |
| Předmět: |
Annealing (metallurgy)
chemistry.chemical_element Mineralogy 02 engineering and technology Chemical vapor deposition 01 natural sciences 0103 physical sciences Figure of merit Thermal stability Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS Leakage (electronics) High-κ dielectric 010302 applied physics Chemistry business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Physical vapor deposition Optoelectronics 0210 nano-technology business Tin |
| Zdroj: | Microelectronic engineering 84 (2007): 1886–1889. info:cnr-pdr/source/autori:Cosnier, V; Besson, P; Loup, V; Vandroux, L; Minoret, S; Casse, M; Garros, X; Pedini, JM; Lhostis, S; Dabertrand, K; Morin, C; Wiemer, C; Perego, M; Fanciulli, M/titolo:Understanding of the thermal stability of the hafnium oxide%2FTiN stack via 2 'high k' and 2 metal deposition techniques/doi:/rivista:Microelectronic engineering/anno:2007/pagina_da:1886/pagina_a:1889/intervallo_pagine:1886–1889/volume:84 Microelectronic Engineering Microelectronic Engineering, Elsevier, 2007, pp.Issue: 9-10, (2007) 1886-1889 Microelectronic Engineering, 2007, pp.Issue: 9-10, (2007) 1886-1889 |
| ISSN: | 0167-9317 1873-5568 |
| Popis: | In this work we evaluate the impact of the gate stack layers deposition technologies and their combination on the thermal stability of the stack with respect to EOT vs leakage figure of merit. Two HfO2 deposition technologies have been used: ALCVD and AVD (for Atomic Vapor Deposition); and two TiN deposition technologies have been evaluated: CVD and PVD. As a result, it appears that stack stability after a 1050 degrees C spike anneal can be achieved by combination of AVD HfO2 and PVD TiN. Anyway a trade-off in terms of mobility degradation using this metallic layer deposition technique is still present. |
| Databáze: | OpenAIRE |
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