Enhanced dopant solubility in strained silicon
| Autor: | R. Jones, J Adey, Patrick R. Briddon |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
inorganic chemicals
Materials science Silicon Inorganic chemistry Analytical chemistry chemistry.chemical_element Condensed Matter::Materials Science symbols.namesake Ultimate tensile strength Physics::Atomic and Molecular Clusters General Materials Science Solubility skin and connective tissue diseases Boron Arsenic Condensed matter physics Strain (chemistry) Dopant Fermi level Fermi energy Strained silicon Condensed Matter Physics Acceptor chemistry Chemical physics symbols sense organs |
| Zdroj: | physica status solidi (c). 2:1953-1957 |
| ISSN: | 1610-1634 |
| Popis: | The equilibrium solubility of substitutional boron and arsenic has been evaluated for silicon under various compressive and tensile biaxial strains using local density functional theory. The solubility of boron is increased by compressive strain for two reasons. The smaller size of the boron atom leads to a solubility enhancement with compressive strain but more significantly the solubility of the ionised acceptor is greatly enhanced due to the strain induced raising of the Fermi-level. The larger dopant, arsenic, is actually found to result in an almost null change in lattice constant in agreement with x-ray scattering experiments. For arsenic, an increased solubility with tensile strain comes entirely from the lowering of the Fermi-level. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text