Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices
| Autor: | Marcel S. Claro, Juan P. Martínez‐Pastor, Alejandro Molina‐Sánchez, Khalil El Hajraoui, Justyna Grzonka, Hamid Pashaei Adl, David Fuertes Marrón, Paulo J. Ferreira, Oleksandr Bondarchuk, Sascha Sadewasser |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
Condensed Matter - Materials Science
Condensed Matter - Mesoscale and Nanoscale Physics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Physics::Optics Applied Physics (physics.app-ph) Physics - Applied Physics Condensed Matter Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Biomaterials Condensed Matter::Materials Science Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Electrochemistry |
| Popis: | Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology. 16 Pages, 5 figures. Supplementary Information included in the end (+10 pages, +10 Figures, + 2 Tables). Partially presented at 21st ICMBE - September 2021 |
| Databáze: | OpenAIRE |
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