Influence of Reactive Ion Etching on THz Transmission and Reflection Properties of NiCr Film Deposited on a Dielectric Substrate
| Autor: | Wei Zhi Li, Xiong Bang Wei, Jun Wang, Hui Ling Tai, Ya Dong Jiang, Jun Gou, De En Gu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
lcsh:TN1-997
RIE Materials science business.industry Terahertz radiation NiCr thin film Reflection Dielectric Absorption Optics Reflection (mathematics) Nano Optoelectronics Transmission General Materials Science THz Thin film Nichrome Reactive-ion etching business Absorption (electromagnetic radiation) lcsh:Mining engineering. Metallurgy |
| Zdroj: | Medžiagotyra, Vol 21, Iss 2, Pp 187-190 (2015) |
| ISSN: | 2029-7289 1392-1320 |
| Popis: | Enhanced terahertz (THz) absorption of NiCr film deposited on a dielectric substrate has been proven by applying a reactive ion etching (RIE) treatment to the dielectric film. Nano – scale nickel – chromium (NiCr) thin films are deposited on RIE treated silicon dioxide (SiO2) dielectric substrates to study the transmission and reflection characteristics. Experimental results suggest that both transmission and reflection of NiCr film are weakened by the RIE treatment. The most significant decrease of transmission is observed in 1 ~ 4 THz while that of reflection occurs in 1.7 ~ 2.5 THz band. The decrease of both transmission and reflection is more significant for NiCr film with higher thickness. The RIE treatment, which induces nano – scale surface structures and increases the effective surface area of NiCr film, enhances the absorption and weakens the transmission and reflection of THz radiation.DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6131 |
| Databáze: | OpenAIRE |
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