FTIR, EPMA, Auger, and XPS analysis of impurity precipitates in CdS films
Autor: | D. H. Rose, A. B. Swartzlander, David W. Niles, Mowafak Al-Jassim, J. D. Webb |
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Rok vydání: | 2002 |
Předmět: |
Materials science
Inorganic chemistry Analytical chemistry chemistry.chemical_element Copper indium gallium selenide solar cells Cadmium telluride photovoltaics Cadmium sulfide chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Vacuum deposition Impurity Gallium Chemical bath deposition |
Zdroj: | Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997. |
DOI: | 10.1109/pvsc.1997.654112 |
Popis: | Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10/sup 2/ micron-scale precipitates. |
Databáze: | OpenAIRE |
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