Topological Transition in a 3 nm Thick Al Film Grown by Molecular Beam Epitaxy
| Autor: | Chi-Te Liang, Ching Chen Yeh, Sheng-Di Lin, Yen Ting Fan, Ankit Kumar, Guan Ming Su, Dinesh K. Patel, Chau Shing Chang, Lee Chow, Bi-Yi Wu |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Superconductivity
Materials science Article Subject Transition temperature 02 engineering and technology Substrate (electronics) Quantum devices 021001 nanoscience & nanotechnology Epitaxy Topology 01 natural sciences Physical phenomena 0103 physical sciences lcsh:Technology (General) lcsh:T1-995 General Materials Science Quantum information 010306 general physics 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Journal of Nanomaterials, Vol 2019 (2019) |
| ISSN: | 1687-4129 1687-4110 |
| Popis: | We have performed detailed transport measurements on a 3 nm thick (as-grown) Al film on GaAs prepared by molecular beam epitaxy (MBE). Such an epitaxial film grown on a GaAs substrate shows the Berezinskii-Kosterlitz-Thouless (BKT) transition, a topological transition in two dimensions. Our experimental data shows that the MBE-grown Al nanofilm is an ideal system for probing interesting physical phenomena such as the BKT transition and superconductivity. The increased superconductor transition temperature (~2.4 K) compared to that of bulk Al (1.2 K), together with the ultrathin film quality, may be advantageous for future superconductor-based quantum devices and quantum information technology. |
| Databáze: | OpenAIRE |
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