2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT
| Autor: | Mohammad A. Alim, Christophe Gaquiere, Md. Abdul Kaium Khan |
|---|---|
| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Algan gan 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention [SPI]Engineering Sciences [physics] law 2DEG 0103 physical sciences Electrical and Electronic Engineering Conduction band 010302 applied physics business.industry Transistor GaN HEMT Reduction rate Temperature Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Conduction band offset Optoelectronics Pseudomorphic GaN pHEMT 0210 nano-technology Fermi gas business |
| Zdroj: | Microelectronic Engineering Microelectronic Engineering, Elsevier, 2021, 238, pp.111508. ⟨10.1016/j.mee.2021.111508⟩ Microelectronic Engineering, 2021, 238, pp.111508. ⟨10.1016/j.mee.2021.111508⟩ |
| ISSN: | 0167-9317 1873-5568 |
| DOI: | 10.1016/j.mee.2021.111508⟩ |
| Popis: | International audience; For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT has been analyzed theoretically and experimentally over the temperature range of ?40 °C to 150 °C. From the experimental and numerical data, a decreasing nature of 2DEG density is noticed for both the devices. The reduction rate in magnitude is higher for AlGaN/GaN HEMT compared to AlGaN/InGaN/GaN pHEMT. It is identified that the reduction of conduction band offset at higher temperatures is responsible for this decreasing nature. Incorporation of an extra 5 nm thick pseudomorphic layer of InGaN in AlGaN/InGaN/GaN pHEMT improves the 2DEG transport properties and enhances the overall transistor performance. Comparatively, the AlGaN/InGaN/GaN pHEMT is found to be exhibiting better 2DEG stability with temperature than AlGaN/GaN HEMT. |
| Databáze: | OpenAIRE |
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