Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas
| Autor: | Yves Fleming, Kevin Menguelti, Mael Guennou, Jérôme Polesel-Maris, Narciso Gambacorti, A.M. Papon, Jérôme Guillot, Raoul Joly, Noureddine Adjeroud, Tai Nguyen, Didier Arl |
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| Přispěvatelé: | Fonds National de la Recherche - FnR [sponsor], Luxembourg Institute of Science & Technology - LIST [research center] |
| Jazyk: | angličtina |
| Předmět: |
Photoluminescence
Materials science Oxygen chemisorption Band gap Physics [G04] [Physical chemical mathematical & earth Sciences] Energy Engineering and Power Technology chemistry.chemical_element 02 engineering and technology Polar surface stabilization 01 natural sciences Oxygen Micrometre Atomic layer deposition Electrical resistivity and conductivity 0103 physical sciences lcsh:TA401-492 Thin film 010302 applied physics Optical properties General Engineering 021001 nanoscience & nanotechnology Microstructure Zinc oxide thin film Chemical engineering chemistry Physique [G04] [Physique chimie mathématiques & sciences de la terre] Electrical properties lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology |
| Zdroj: | Results in Materials Results in Materials, Vol 6, Iss, Pp 100088-(2020) |
| ISSN: | 2590-048X |
| DOI: | 10.1016/j.rinma.2020.100088 |
| Popis: | The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence of defects, such as oxygen vacancies or interstitial zinc. Here, we investigate the material properties of ZnO polycrystalline thin films prepared by thermal Atomic Layer Deposition (ALD) with the presence of molecular oxygen pulsing during the growth. By means of structural, electrical and optical characterizations, we identify key growth parameters of this unusual ALD process. Unexpectedly, the influence of oxygen molecules on the crystallography, microstructure and morphology of ZnO films is significant from hundred-nanometers to micrometer thick film. The electrical resistivity of the films grown with oxygen gas shows a dramatic increase from 3 to 4 orders of magnitude. Additionally, photoluminescence measurements reveal that deep-level emissions caused by defects located deep in the band gap can be reduced by applying an adequate pulsing of oxygen gas during the process. Finally, we conclude with a discussion about the degree of consistency between the chemical composition, the inner strain and the optical and electrical properties of the films obtained with the different thermodynamic parameters of growth. Several hypotheses are discussed in order to understand the dominance of (002) orientation in the presence of oxygen during the ALD growth process. |
| Databáze: | OpenAIRE |
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