| Autor: |
Kazuhito Yasuda, Akikazu Tanaka, Touati Ferid, Mitsuru Ekawa, Manabu Saji |
| Jazyk: |
angličtina |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
JOURNAL OF APPLIED PHYSICS. 71(6):2669-2674 |
| ISSN: |
0021-8979 |
| Popis: |
The As doping mechanism in (100) CdTe layers grown on (100)GaAs by atmospheric‐pressure metalorganic vapor phase epitaxy was studied. Triethylarsine (TEAs) was used as a dopant source. The source materials used were dimethylcadmium (DMCd) and diethyltelluride (DETe). The As incorporation was enhanced by decreasing the DETe flow rate under a fixed DMCd flow condition, and by lowering the growth temperature. Assuming 100% activation of As, the As incorporation efficiency was estimated to be about 0.1%. The As incorporation was dominated by the sticking rate of the As species onto the Cd species. The hole concentration was controlled from 2×1015 to 3×1016 cm-3 in proportion to the TEAs flow rate below 1×10-7 mol/min. Those doped layers showed hole mobilities as high as 75 cm2/Vs. Low‐temperature photoluminescence (PL) studies revealed that a neutral‐acceptor bound‐exciton at 1.5901 eV is due to a substitutional As acceptor on the Te site. The As ionization energy was about 90 meV from the PL and electrical measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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