In situ characterization of irradiation-induced microstructural evolution in urania single crystals at 773 K
| Autor: | L. Delauche, Frédérico Garrido, A. Gentils, Yara Haddad |
|---|---|
| Přispěvatelé: | Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Yield (engineering) Materials science Analytical chemistry 02 engineering and technology [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex] 021001 nanoscience & nanotechnology 01 natural sciences Ion Crystal 0103 physical sciences Radiation damage Irradiation Destabilisation Dislocation 0210 nano-technology Saturation (chemistry) Instrumentation |
| Zdroj: | Nucl.Instrum.Meth.B 19th International Conference on Radiation Effects in Insulators 19th International Conference on Radiation Effects in Insulators, Jul 2017, Versailles, France. pp.25-30, ⟨10.1016/j.nimb.2017.12.019⟩ |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2017.12.019 |
| Popis: | International audience; Implantations with low-energy ions (Xe, La) on UO2 single crystals at 773 K were performed to investigate the role played by both the radiation damage and the incorporation of foreign elements on the matrix destabilisation. The radiation damage was monitored by both in situ RBS-C and in situ TEM during ion irradiation experiments performed at 773 K. RBS-C data shows a similar regular increase of the radiation-induced disorder in crystals for both Xe and La ions followed by a saturation plateau at about 3–4 dpa. An unexpected difference of the value of the saturation plateaus is observed, with a higher value recorded for Xe-irradiated crystals. In situ TEM images show the apparition and evolution of several defects as a function of the ion dose up to 40 dpa, irrespective of the nature of the bombarding ion: ‘black dots’ defects, dislocation loops and lines, and finally a dislocation network at high dpa. Nanometre-sized gas bubbles were observed at 773 K for the Xe-implanted crystal for doses larger than 3 dpa. Neither precipitate nor cavity were observed on La-implanted crystals. The difference in the saturation plateau as seen by RBS-C can be ascribed to the formation of the Xe aggregates that lead to an increase of the dechannelling yield. |
| Databáze: | OpenAIRE |
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