InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs
| Autor: | Christophe Caillaud, M. Achouche, D. Carpentier, Mourad Chtioui, M Lahrichi, G. Glastre |
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| Rok vydání: | 2010 |
| Předmět: |
lcsh:Applied optics. Photonics
InGaAs microwave photonics Materials science Photodetector law.invention chemistry.chemical_compound Responsivity Optics law APDs lcsh:QC350-467 avalanche photodiodes Electrical and Electronic Engineering Photodiodes business.industry lcsh:TA1501-1820 Linearity Avalanche photodiode Atomic and Molecular Physics and Optics Avalanche breakdown Photodiode SAM chemistry Optoelectronics Photonics business lcsh:Optics. Light Indium gallium arsenide |
| Zdroj: | IEEE Photonics Journal, Vol 2, Iss 3, Pp 460-468 (2010) |
| ISSN: | 1943-0647 |
| DOI: | 10.1109/jphot.2010.2050056 |
| Popis: | While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors. By adding an avalanche multiplication layer to form an avalanche photodiode (APD) using the Separated Absorption and Multiplication (SAM) structure, one can take advantage of the very low-noise properties of the multiplication process in large-bandgap AI(Ga)(ln)As material to improve receiver sensitivity by > 10 dB. Under high-power-level injection, specific PIN structures have been developed to improve space charge effects and linear operation as needed for power applications such as high bit rates using coherent detection or analog photonic links. Specific designs to achieve simultaneously broad bandwidth, high responsivity, very high power saturation, and high linearity will be discussed. |
| Databáze: | OpenAIRE |
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