Interface Analysis of Transparent Analog Capacitor Using ITO Electrodes and ALD High-k Dielectrics

Autor:	Hyeong Joon Kim, Yu Jin Choi, Jaeyeong Heo, Myung Soo Huh, Sang-Hyun Park, Sungin Suh, Cheol Seong Hwang, Seok-jun Won
Rok vydání:	2009
Předmět:	Capacitor Materials science business.industry law Electrode Electronic engineering Optoelectronics Dielectric business Interface analysis High-κ dielectric law.invention
Zdroj:	ECS Transactions. 25:367-376
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3205071
Popis:	For the first time, we report transparent analog capacitors using ITO electrodes and HfO2 (and/or Al2O3) high-k dielectrics. The use of ITO bottom and top electrodes did not cause the electrical degradation to the capacitor compared to TiN and Pt electrodes. In the viewpoint of analog capacitors, capacitors using ITO electrodes show a few different characteristics. The right-side inclination of a C-V curve in ITO electrodes suggests that there is a thicker depletion layer at the top interface. This is probably due to the high resistivity of the Sn-rich top ITO initial layer on the dielectric film. Before and after subsequent thermal annealing, while the C-V curve of ITO/Al2O3/ITO is hardly changed, that of ITO/HfO2(or HAH)/ITO is greatly changed. Our results demonstrate that this comes not from the crystallinity change of ITO and/or HfO2 but from the composition change (ex. Hf diffusion and oxygen deficiency) at the interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2a696ef098b95333d16698a2fd3a90c https://doi.org/10.1149/1.3205071 Zobrazit plný text záznamu