Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics
| Autor: | Gichang Noh, Hwayoung Song, Min Soo Kang, Tae Soo Kim, Seorin Cho, Hyun-Jun Chai, Seong Rae Cho, Jeongwon Park, Kibum Kang, Ayoung Ham, Seungwoo Song, Sunghwan Bang, Joon Young Kwak, Intek Song, Min-kyung Jo, Kiwon Cho, Chanwoo Song |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Intercalation (chemistry) General Engineering Dangling bond General Physics and Astronomy 02 engineering and technology Limiting 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics 0104 chemical sciences Semiconductor Covalent bond Atom Vertical direction General Materials Science Electronics 0210 nano-technology business |
| Zdroj: | ACS Nano. 14:16266-16300 |
| ISSN: | 1936-086X 1936-0851 |
| Popis: | Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering |
| Databáze: | OpenAIRE |
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