Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
| Autor: | M. A. Tito, B. G. M. Tavares, L. Fernandes dos Santos, Ray R. LaPierre, Yu. A. Pusep |
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| Rok vydání: | 2015 |
| Předmět: |
Condensed Matter::Quantum Gases
Physics Photoluminescence Condensed matter physics Condensed Matter::Other business.industry Superlattice Electron Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Polarization (waves) Magnetic field Condensed Matter::Materials Science Semiconductor General Materials Science Double quantum business CAMPO MAGNÉTICO |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| Popis: | The characteristic energies, occupancies and polarizations of the minibands formed by the Γ-Γ and Γ-Xz interlayer electon tunnelings in the InGaAs/InP superlattices are studied in the regime of the integer quantum Hall effect by polarization resolved photoluminescence. Accordingly, the magnetic field induced shrinkage of the interminiband gap, predicted by the theory, and as a consequence, the redistribution of charge over the superlattice minibands and the depolarization of the quantum Hall electron states are observed at odd filling factors. The response of the electrons residing in the InGaAs/InP superlattice minibands to the magnetic field is found very similar to the corresponding response of the electrons confined in the symmetric and anti-symmetric two-dimensional minibands of GaAs/AlGaAs double quantum wells. The presented results are evidence of the formation of the correlated states in multi-component electron systems formed in semiconductor multiple layers at odd filling factors. |
| Databáze: | OpenAIRE |
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