Surface Modification of Cu(In,Ga)Se2 Thin Films During Aqueous Oxidation Etch

Autor:	B. Canava, Jacques Vedel, Daniel Lincot, Jean-François Guillemoles, F. Malengreau, H. Ardelean
Rok vydání:	1997
Předmět:	Chemical state Materials science Band bending Chemical engineering law Surface photovoltage Inorganic chemistry Solar cell Surface modification Surface charge Quantum dot solar cell Copper indium gallium selenide solar cells law.invention
Zdroj:	Scopus-Elsevier
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-485-133
Popis:	The control of the barrier height at the Cu(In,Ga)Se2(CIGS)/CdS interface, via the chemical state of the CIGS surface, is a key to improve solar cell performances. In this paper chemical modifications have been achieved by the electrochemical method, by varying both the pH of the solution and the applied potential. It is shown that the potential for electrochemical oxidation depends on the pH, in good agreement with the thermodynamic predictions. The resulting surface composition of CIGS, analyzed by XPS, also depends on the pH. Contact Potential Differences (CPD) and Surface Photovoltage (SPV) measurements show that the electronic properties of the CIGS surface are modified. The important result is that the oxidation leads to the formation of permanent positive surface charges, which increase the band bending up to 0.20 V in a direction favorable for the solar cell performances.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1e6aab4123425e8c18388bf74dcabf2 https://doi.org/10.1557/proc-485-133 Zobrazit plný text záznamu Full text from SpringerLink