External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers
| Autor: | Sebastian Hietzschold, Oliver Brandt, C. Sinito, Eric Mankel, T. Auzelle, Robert Lovrincic, Stefan Brackmann, Wolfgang Kowalsky, Sergio Fernández-Garrido, Florian Ullrich |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Photoluminescence Nanowire Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Heterojunction Applied Physics (physics.app-ph) Physics - Applied Physics 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronegativity Band bending Chemical engineering 0103 physical sciences Surface modification General Materials Science Work function 0210 nano-technology Surface states |
| Zdroj: | ACS applied materialsinterfaces. 13(3) |
| ISSN: | 1944-8252 |
| Popis: | We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications. |
| Databáze: | OpenAIRE |
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