Defect formation in single layer graphene under extreme ultraviolet irradiation
| Autor: | Frederik Bijkerk, An Gao, Erwin Zoethout, Christopher James Lee, Jacobus Marinus Sturm |
|---|---|
| Přispěvatelé: | XUV Optics, Faculty of Science and Technology |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Graphene Extreme ultraviolet lithography General Physics and Astronomy Surfaces and Interfaces General Chemistry Photoelectric effect Condensed Matter Physics Photochemistry METIS-307248 Chemical reaction Dissociation (chemistry) Surfaces Coatings and Films law.invention IR-93252 symbols.namesake law Extreme ultraviolet symbols Irradiation Raman spectroscopy |
| Zdroj: | Applied Surface Science, 317, 745-751 Applied surface science, 317, 745-751. Elsevier |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2014.08.177 |
| Popis: | We study extreme ultraviolet (EUV) radiation induced defects in single-layer graphene. Two mechanisms for inducing defects in graphene were separately investigated: photon induced chemical reactions between graphene and background residual gases, and breaking sp(2) bonds, due to photon and/or photoelectrons induced bond cleaving. Raman spectroscopy shows that D peak intensities grow after EUV irradiation with increasing water partial pressure in the exposure chamber. Temperature-programmed desorption (TPD) experiments prove that EUV radiation results in water dissociation on the graphene surface. The oxidation of graphene, caused by water dissociation, is triggered by photon and/or photoelectron induced dissociation of water. Our studies show that the EUV photons break the sp(2) bonds, forming sp(3) bonds, leading to defects in graphene. (C) 2014 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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