High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition
| Autor: | Jung Joon Pyeon, Jeong Hwan Han, Cheol Seong Hwang, Byung Joon Choi, Ga Yeon Lee, In-Hwan Baek, Seong Keun Kim, Seong Ho Han, Taek-Mo Chung |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Oxide chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid Atomic layer deposition chemistry.chemical_compound chemistry Sputtering Thin-film transistor 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business Layer (electronics) Indium Deposition (law) |
| Zdroj: | ACS Applied Materials & Interfaces. 11:14892-14901 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b03331 |
| Popis: | A new deposition technique is required to grow the active oxide semiconductor layer for emerging oxide electronics beyond the conventional sputtering technique. Atomic layer deposition (ALD) has the benefits of versatile composition control, low defect density in films, and conformal growth over a complex structure, which can hardly be obtained with sputtering. This study demonstrates the feasibility of growing amorphous In–Zn–Sn–O (a-IZTO) through ALD for oxide thin-film transistor (TFT) applications. In the ALD of the a-IZTO film, the growth behavior indicates that there exists a growth correlation between the precursor molecules and the film surface where the ALD reaction occurs. This provides a detailed understanding of the ALD process that is required for precise composition control. The a-IZTO film with In/Zn/Sn = 10:70:20 was chosen for high-performance TFTs, among other compositions, regarding the field-effect mobility (μFE), turn-on voltage (Von), and subthreshold swing (SS) voltage. The optimize... |
| Databáze: | OpenAIRE |
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