A 103 dB DR Fourth-Order Delta-Sigma Modulator for Sensor Applications
| Autor: | Seokjae Song, Jeongjin Roh, Jae-Seong Lee |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Computer Networks and Communications
delta-sigma modulator lcsh:TK7800-8360 02 engineering and technology Delta-sigma modulation law.invention biomedical sensor law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Oversampling Electrical and Electronic Engineering Physics business.industry Dynamic range Amplifier 020208 electrical & electronic engineering Bandwidth (signal processing) Transistor lcsh:Electronics Electrical engineering 020206 networking & telecommunications CMOS Hardware and Architecture Control and Systems Engineering Operational transconductance amplifier Signal Processing operational transconductance amplifier business feedforward architecture |
| Zdroj: | Electronics, Vol 8, Iss 10, p 1093 (2019) Electronics Volume 8 Issue 10 |
| ISSN: | 2079-9292 |
| Popis: | This paper describes a fourth-order cascade-of-integrators with feedforward (CIFF) single-bit discrete-time (DT) switched-capacitor (SC) delta-sigma modulator (DSM) for high-resolution applications. This DSM is suitable for high-resolution applications at low frequency using a high-order modulator structure. The proposed operational transconductance amplifier (OTA), used a feedforward amplifier scheme that provided a high-power efficiency, a wider bandwidth, and a higher DC gain compared to recent designs. A chopper-stabilization technique was applied to the first integrator to remove the 1/f noise from the transistor, which is inversely proportional to the frequency. The designed DSM was implemented using 0.35 µ m complementary metal oxide semiconductor (CMOS) technology. The oversampling ratio (OSR) was 128, and the sampling frequency was 128 kHz. At a 500 Hz bandwidth, the signal-to-noise ratio (SNR) was 100.3 dB, the signal-to-noise distortion ratio (SNDR) was 98.5 dB, and the dynamic range (DR) was 103 dB. The measured total power dissipation was 99 µ W from a 3.3 V supply voltage. |
| Databáze: | OpenAIRE |
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