Ultra-sensitive nanoscale magnetic field sensors based on resonant spin filtering
| Autor: | Ashwin Tulapurkar, Abhishek Sharma, Bhaskaran Muralidharan |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Optimal design
Materials science Magnetoresistance Dephasing Proposal FOS: Physical sciences 02 engineering and technology Approx 01 natural sciences Robustness (computer science) Driven 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Resonant Tunneling Electrical and Electronic Engineering 010302 applied physics Condensed Matter - Mesoscale and Nanoscale Physics Torques Spintronics business.industry 021001 nanoscience & nanotechnology Magnetoresistance (Mr) Sensors Electronic Optical and Magnetic Materials Magnetic field Tunnel magnetoresistance Optoelectronics Double-Tunnel-Junction 0210 nano-technology business Magnetic Tunnel Junction (Mtj) |
| DOI: | 10.48550/arxiv.1602.04438 |
| Popis: | Solid state magnetic field sensors based on magneto-resistance modulation find direct applications in communication devices, specifically in proximity detection, rotational reference detection and current sensing. In this work, we propose sensor structures based on the magneto-resistance physics of resonant spin-filtering and present device designs catered toward exceptional magnetic field sensing capabilities. Using the non-equilibrium Green's function spin transport formalism self consistently coupled to the Poisson's equation, we present highly-tunable pentalayer magnetic tunnel junction structures that are capable of exhibiting an ultra-high peak tunnel magneto resistance $(\approx 2500 \%$). We show how this translates to device designs featuring an ultra-high current sensitivity enhancement of over 300\% in comparison with typical trilayer MTJ sensors, and a wider tunable range of field sensitivity. We also demonstrate that a dynamic variation in sensor functionalities with the structural landscape enables a superior design flexibility over typical trilayer sensors. An optimal design exhibiting close to a 700\% sensitivity increase as a result of angle dependent spin filtering is then presented.This work sets a stage to engineer spintronic building blocks via the design of functional structures tailored to exhibit ultra-sensitive spin filtering. Comment: 8 pages, 12 figures |
| Databáze: | OpenAIRE |
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