| Autor: |
Matteo Meneghini, A. Barbato, C. De Santi, Gaudenzio Meneghesso, E. Canato, A. Stockman, A. Banerjee, F. Masin, E. Zanonivl, Peter Moens |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
IRPS |
| DOI: |
10.1109/irps45951.2020.9129116 |
| Popis: |
This paper reports a detailed analysis of the performance and stability of E-mode GaN HEMTs under soft and hard switching conditions. We developed a novel on-wafer setup that controls the overlapping between the gate and drain pulses and, simultaneously, senses the current at the source. This allowed us to plot the instantaneous power, the switching I-V locus and evaluate the switching losses on wafer level. The dynamic on-resistance RDS,ON is evaluated during hard and soft switching at room temperature and high temperature. The results demonstrate that (i) the properties of the buffer impact on dynamic-Ron, in soft- and hard-switching; devices with non-optimized buffer have stronger dynamic-Ron under hard switching; (ii) Ron-increase under hard switching is not strongly influenced by switching (power) losses; (iii) results indicate that a higher dynamic-Ron in hard switching is correlated to a wider switching locus. The proposed testing approach can be used as a screening tool to evaluate – in one single measurement – the switching losses, the dynamic-Ron and the impact of hard-switching on wafer level. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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