Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors
| Autor: | Peter Moens, Michael J. Uren, Serge Karboyan, Markus Caesar, Martin Kuball, Piet Vanmeerbeek |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
HEMTs business.industry microwave transistors Transistor Doping Wide-bandgap semiconductor Gallium nitride Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Electric field field effect transistors Optoelectronics CDTR Field-effect transistor Electrical and Electronic Engineering business power transistors Leakage (electronics) Voltage |
| Zdroj: | Uren, M J, Caesar, M, Karboyan, S, Moens, P, Vanmeerbeek, P & Kuball, M H H 2015, ' Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors ', IEEE Electron Device Letters, vol. 36, no. 8, pp. 826-828 . https://doi.org/10.1109/led.2015.2442293 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2015.2442293 |
| Popis: | It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices. |
| Databáze: | OpenAIRE |
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