THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS
| Autor: | Peter Hornak, Daniel Kottfer, Kaczmarek Lukasz, Kianicova Marta, Balko Jan, Rehak Frantisek, Pekarcikova Miriam, Ciznar Peter |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Annealing (metallurgy) General Chemical Engineering Properties 02 engineering and technology 01 natural sciences Annealing Analytical Chemistry lcsh:TP785-869 0103 physical sciences WC/C layer Materials Chemistry Physical and Theoretical Chemistry 010302 applied physics business.industry Doping N₂+SiH₄ Biasing 021001 nanoscience & nanotechnology lcsh:Clay industries. Ceramics. Glass Cavity magnetron Ceramics and Composites Optoelectronics 0210 nano-technology business DC magnetron sputtering |
| Zdroj: | Ceramics-Silikáty, Vol 62, Iss 1, Pp 97-107 (2017) |
| ISSN: | 1804-5847 0862-5468 |
| DOI: | 10.13168/cs.2018.0001 |
| Popis: | Tungsten carbide (WC/C) layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT), indentation modulus (EIT) and coefficient of friction (COF) values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively. |
| Databáze: | OpenAIRE |
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