High-voltage devices and circuits fabricated using foundry CMOS for use with electrostatic MEM actuators
| Autor: | Gregory T. A. Kovacs, Nadim I. Maluf, R.J. Reay |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Spice Differential amplifier Hardware_PERFORMANCEANDRELIABILITY PMOS logic law.invention Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering Instrumentation NMOS logic Electronic circuit Microelectromechanical systems business.industry Amplifier Transistor Metals and Alloys Electrical engineering High voltage Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS business Hardware_LOGICDESIGN |
| Zdroj: | Sensors and Actuators A: Physical. 52:187-192 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/0924-4247(96)80147-6 |
| Popis: | Devices and circuits capable of high-voltage operation are necessary for the actuation of micromachined electrostatic structures that require high voltages (20–100 V). These high-voltage devices have traditionally been fabricated using specialized processes. Monolithic integration of the actuators with circuits, including the high-voltage drive, makes it important to provide high-voltage circuit elements in CMOS, which is often the process of choice for signal-processing circuits. Fabrication processes available through foundry services using standard CMOS are attractive to users with no or limited access to clean-room facilities. High-voltage n- and p-type MOS transistors have been fabricated using the 2.0 μm analog CMOS process available through the MOSIS foundry service. By using the n-well and the p-base layers as lightly doped drains, breakdown voltages are 120 V and −27 V for the NMOS and PMOS structures, respectively. The corresponding Early voltages are − 1000 V for the NMOS and 240 V for the PMOS devices. A simple differential amplifier using the high-voltage devices has been fabricated and used to drive all-aluminum electrostatic actuator structures. A first-level SPICE model has also been derived for the high-voltage transistors. |
| Databáze: | OpenAIRE |
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