A Highly Compact Active Wideband Balun With Impedance Transformation in SiGe BiCMOS
| Autor: | Balwant Godara, A. Fabre |
|---|---|
| Přispěvatelé: | Fabre, Alain |
| Rok vydání: | 2008 |
| Předmět: |
Engineering
Radiation business.industry Frequency band [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Transistor Impedance matching Electrical engineering BiCMOS Condensed Matter Physics law.invention law Balun visual_art Electronic component visual_art.visual_art_medium Electrical and Electronic Engineering Wideband business Electrical impedance ComputingMilieux_MISCELLANEOUS |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 56:22-30 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/tmtt.2007.911932 |
| Popis: | A new conveyor-based single-ended to differential balun is proposed. Thanks to the quasi-absence of passive components, this is an extremely size-efficient balun (0.036 ). The use of a new impedance-matching technique makes this balun the first transistor-based solution with controllable port impedances. Fabricated in a 0.35-mum SiGe BiCMOS technology with fT=45 GHz, the balun shows the following performance: wideband impedance matching at all three ports, good balance between the two outputs (better than 3 dB in amplitude and 13deg in phase) over frequency bands extending from 0 to 3 GHz, linear operation for powers up to input powers of -2 dBm, and stability against temperature and process variations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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