The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
| Autor: | Yu-De Lin, Kan-Hsueh Tsai, S. Z. Rahaman, Pei-Hua Wang, Yu-Sheng Chen, Heng-Yuan Lee, Ming-Jinn Tsai, Chien-Hua Hsu, Wei-Su Chen, Pang-Shiu Chen |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Layer thickness Buffer (optical fiber) Resistive random-access memory Non-volatile memory chemistry Resistive switching 0103 physical sciences Electrochemistry Optoelectronics General Materials Science 0210 nano-technology Tin business Spectroscopy Voltage |
| Zdroj: | Langmuir. 33:4654-4665 |
| ISSN: | 1520-5827 0743-7463 |
| DOI: | 10.1021/acs.langmuir.7b00479 |
| Popis: | Ti/HfOx-based resistive random access memory (RRAM) has been extensively investigated as an emerging nonvolatile memory (NVM) candidate due to its excellent memory performance and CMOS process compatibility. Although the importance of the role of the Ti buffer layer is well recognized, detailed understanding about the nature of Ti thickness-dependent asymmetric switching is still missing. To realize this, the present work addresses the effects of Ti buffer layer thickness on the switching properties of TiN/Ti/HfOx/TiN 1T1R RRAM. Consequently, we have demonstrated a simple strategy to regulate the FORMING voltage, leakage current, memory window, and decrease the operation current, etc. by varying the thickness of the Ti layer on the HfOx dielectrics. Accordingly, controllable and reliable bipolar, complementary, and reverse bipolar resistive switching (BRS, CRS, and R-BRS) properties have been demonstrated. This work also provides the direction to avoid unwanted CRS properties during the first RESET operat... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|