A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs
| Autor: | Hiroaki Arimura, Zhigang Ji, Brahim Benbakhti, Jigang Ma, Jian Fu Zhang, Weidong Zhang, Jerome Mitard |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Band gap TK Kinetics chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Electronic engineering Optoelectronics Degradation (geology) Charge carrier Electrical and Electronic Engineering 0210 nano-technology business Energy (signal processing) Photonic crystal |
| Zdroj: | IEEE Transactions on Electron Devices. 63:3830-3836 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2597540 |
| Popis: | The high mobility germanium (Ge) channel is considered as a strong candidate for replacing Si in pMOSFETs in the near future. It has been reported that the conventional power-law degradation kinetics of Si devices is inapplicable to Ge. In this paper, further investigation is carried out on defect energy distribution, which clearly shows that this is because the defects in GeO2/Ge and SiON/Si devices have different physical properties. The three main differences are: 1) energy alternating defects (EAD) exist in Ge devices but are insignificant in Si; 2) the distribution of as-grown hole traps has a tail in the Ge bandgap but not in Si, which plays an important role in the degradation kinetics and device lifetime prediction; and 3) EAD generation in Ge devices requires the injected charge carriers to overcome a second energy barrier, but not in Si. Taking the above differences into account, the power-law kinetics of EAD generation can be successfully restored by following a new procedure, which can assist in the Ge process/device optimization. |
| Databáze: | OpenAIRE |
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