Graphene growth by molecular beam epitaxy: an interplay between desorption, diffusion and intercalation of elemental C species on islands
| Autor: | Paolo Lacovig, Alessandro Baraldi, Lev Kantorovich, Luca Bignardi, Silvano Lizzit, Cristian A. Tache, Francesco Presel, Holly Alexandra Tetlow |
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| Přispěvatelé: | Presel, Francesco, Tetlow, Holly, Bignardi, Luca, Lacovig, Paolo, Tache, Cristian A., Lizzit, Silvano, Kantorovich, Lev, Baraldi, Alessandro |
| Rok vydání: | 2018 |
| Předmět: |
X-ray photoelectron spectroscopy
Materials science Materials Science carbon monomers 02 engineering and technology Chemical vapor deposition 01 natural sciences graphene growth law.invention carbon monomer law Desorption 0103 physical sciences General Materials Science Diffusion (business) 010306 general physics density functional theory business.industry Graphene carbon timers 021001 nanoscience & nanotechnology Graphene | Chemical vapor deposition | graphene synthesis Semiconductor Chemical physics Density functional theory 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Nanoscale (Online) 10 (2018): 7396–7406. doi:10.1039/c8nr00615f info:cnr-pdr/source/autori:Presel F.; Tetlow H.; Bignardi L.; Lacovig P.; Tache C.A.; Lizzit S.; Kantorovich L.; Baraldi A./titolo:Graphene growth by molecular beam epitaxy: An interplay between desorption, diffusion and intercalation of elemental C species on islands/doi:10.1039%2Fc8nr00615f/rivista:Nanoscale (Online)/anno:2018/pagina_da:7396/pagina_a:7406/intervallo_pagine:7396–7406/volume:10 Presel, F, Tetlow, H, Bignardi, L, Lucovig, P, Tache, C, Lizzit, S, Kantorovitch, L & Baraldi, A 2018, ' Graphene growth by molecular beam epitaxy : an interplay between desorption, diffusion and intercalation of elemental C species on the islands ', Nanoscale . https://doi.org/10.1039/C8NR00615F |
| ISSN: | 2040-3372 |
| DOI: | 10.1039/c8nr00615f |
| Popis: | The growth of graphene by molecular beam epitaxy from an elemental carbon precursor is a very promis- ing technique to overcome some of the main limitations of the chemical vapour deposition approach, such as the possibility to synthesize graphene directly on a wide variety of surfaces including semi- conductors and insulators. However, while the individual steps of the chemical vapour deposition growth process have been extensively studied for several surfaces, such knowledge is still missing for the case of molecular beam epitaxy, even though it is a key ingredient to optimise its performance and effectiveness. In this work, we have performed a combined experimental and theoretical study comparing the growth rate of the molecular beam epitaxy and chemical vapour deposition processes on the prototypical Ir (111) surface. In particular, by employing high-resolution fast X-ray photoelectron spectroscopy, we were able to follow the growth of both single- and multi-layer graphene in real time, and to identify the spectro- scopic fingerprints of the different C layers. Our experiments, supported by density functional theory cal- culations, highlight the role of the interaction between different C precursor species and the growing gra- phene flakes on the growth rate of graphene. These results provide an overview of the main differences between chemical vapour deposition and molecular beam epitaxy growth and thus on the main para- meters which can be tuned to optimise growth conditions. |
| Databáze: | OpenAIRE |
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