Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
| Autor: | Adalberto Fazzio, Marcio Costa, Caio H. Lewenkopf, Gabriel R. Schleder, Armando Pezo, Bruno Focassio |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Work (thermodynamics)
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Spintronics Condensed Matter - Mesoscale and Nanoscale Physics Non-equilibrium thermodynamics FOS: Physical sciences 02 engineering and technology Function (mathematics) 021001 nanoscience & nanotechnology 01 natural sciences Vacancy defect Topological insulator 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Density functional theory Edge states Physics::Chemical Physics 010306 general physics 0210 nano-technology |
| Popis: | The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder on the electronic transport of long nanoribbons, up to $157\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$, as a function of vacancy concentration. In narrow nanoribbons, a finite-size effect gives rise to hybridization between the edge states erasing topological protection. Hence, even small vacancy concentrations enable backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|