Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics
| Autor: | Larysa Khomenkova, Fabrice Gourbilleau, Khalil Hijazi, Julien Cardin, Richard Rizk |
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| Přispěvatelé: | Brassy, Chantal, Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252), Université de Caen Normandie (UNICAEN), Normandie Université (NU)-Normandie Université (NU)-École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche sur les Matériaux Avancés (IRMA), Normandie Université (NU)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Normandie Université (NU)-Institut national des sciences appliquées Rouen Normandie (INSA Rouen Normandie), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université de Rouen Normandie (UNIROUEN), Institut National des Sciences Appliquées (INSA)-Normandie Université (NU)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Photoluminescence [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic Silicon business.industry Annealing (metallurgy) Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 7. Clean energy Ion chemistry Excited state 0103 physical sciences [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics 010306 general physics 0210 nano-technology Silicon oxide business Excitation |
| Zdroj: | Journal of Applied Physics Journal of Applied Physics, American Institute of Physics, 2009, 106, pp.024311 HAL Journal of Applied Physics, 2009, 106, pp.024311 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.3177243 |
| Popis: | International audience; Series of Er-doped Si-rich silicon oxide layers were studied with the aim of optimizing the coupling between Er ions and the Si-based sensitizers. The layers were grown at substrate temperature between 400 and 600 °C by the cosputtering of three confocal targets: Si, SiO2, and Er2O3. The influence of Si excess (5–15 at. %) and annealing temperature (500–1100 °C) was examined for two concentrations of Er ions (3.5x1020 and ~1021 cm−3). We report the first observation of significant Er photoluminescence (PL) from as-grown samples excited by a nonresonant 476 nm line, with a lifetime in the range of 1.3–4 ms. This suggests the occurrence of an indirect excitation of Er through Si-based entities formed during the deposition. A notable improvement was observed for both Er PL intensity and lifetime after annealing at 600 °C. This temperature is lower than that required for phase separation, suggesting the formation of “atomic scale” sensitizers (Si agglomerates, for example) considered in recent work. For high Er doping (~1021 cm−3), an optimum Er PL was obtained for the sample grown at 500 °C, annealed at 600 °C, and containing ~13 at. % of Si excess. This high PL should correspond to an optimum fraction of coupled Er for this series, which was roughly estimated to about 11% of the total Er content for an excitation photon flux of few 1019 ph cm−2 s−1. For the moderately Er-doped series (3.5x1020 cm−3) grown at 500 °C, the optimum Er PL was found for the samples containing about 9 at. % silicon and annealed in the 600–900 °C range. The time decay reached a value as high as 9 ms for low Si excess ( |
| Databáze: | OpenAIRE |
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