Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs

Autor:	YewChung Sermon Wu, Hao Ouyanga, Ji-Hao Cheng
Rok vydání:	2007
Předmět:	Lift (force) Materials science business.industry law Reverse bias Optoelectronics business Laser Light-emitting diode law.invention
Zdroj:	ECS Transactions. 6:285-287
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2731196
Popis:	The KrF pulsed excimer laser (248 nm) and the frequency- tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light- emitting diodes (LEDs) were studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef5c71addabec8efcc063b6918a3df73 https://doi.org/10.1149/1.2731196 Zobrazit plný text záznamu