Ablation of silicon suboxide thin layers
| Autor: | M. Jahn, J. Richter, Jürgen Ihlemann, R. Weichenhain-Schriever, J. Meinertz |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
Suboxide
Materials science Silicon Chemistry(all) medicine.medical_treatment chemistry.chemical_element 02 engineering and technology Substrate (electronics) 01 natural sciences Fluence Optics Materials Science(all) 0103 physical sciences medicine General Materials Science Irradiation Thin film 010302 applied physics Thin layers business.industry General Chemistry 021001 nanoscience & nanotechnology Ablation Physics Operating Procedures Materials Treatment Surfaces and Interfaces Thin Films Characterization and Evaluation of Materials Nanotechnology Optical and Electronic Materials Condensed Matter Physics chemistry Optoelectronics 0210 nano-technology business |
| Popis: | We investigate the ablation of SiOx thin films on fused silica substrates using single-pulse exposures at 193 nm and 248 nm. Two ablation modes are considered: front side (the surface of a film is irradiated from above) and rear side (a film is irradiated through its supporting substrate). Fluence is varied from below 200 mJ/cm2 to above 3 J/cm2. SiOx films of thickness 200 nm, 400 nm, and 600 nm are ablated. In the case of rear-side illumination, at moderate fluences (around 0.5 mJ/cm2) the ablation depth corresponds roughly to the film thickness, above 1 J/cm2 part of the substrate is ablated as well. In the case of front-side ablation the single-pulse ablation depth is limited for all film thicknesses to less than 200 nm even at fluences up to 4 J/cm2. Experimental results are discussed in relation to film thickness, fluence, and ablation mode. Simple numerical calculations are performed to clarify the influence of heat transport on the ablation process. peerReviewed |
| Databáze: | OpenAIRE |
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