Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity
| Autor: | Ze-Han Wu, L. X. Qian, Xingzhao Liu, Y. Zhang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) Band gap photosensitivity 02 engineering and technology medicine.disease_cause 01 natural sciences lcsh:Technology Article InGaMgO Responsivity 0103 physical sciences medicine Transmittance General Materials Science post-deposition annealing lcsh:Microscopy lcsh:QC120-168.85 010302 applied physics lcsh:QH201-278.5 business.industry lcsh:T responsivity oxygen vacancy 021001 nanoscience & nanotechnology Amorphous solid Thin-film transistor lcsh:TA1-2040 ultraviolet photo-TFT Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business lcsh:Engineering (General). Civil engineering (General) lcsh:TK1-9971 Ultraviolet Dark current |
| Zdroj: | Materials, Vol 10, Iss 2, p 168 (2017) Materials; Volume 10; Issue 2; Pages: 168 Materials |
| ISSN: | 1996-1944 |
| Popis: | Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays. |
| Databáze: | OpenAIRE |
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