Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

Autor: Min Hui Chuang, Pei Jung Chao, Yiming Li, Chieh Yang Chen
Rok vydání: 2019
Předmět:
Materials science
gate-all-around
Nanowire
work function fluctuation
02 engineering and technology
Hardware_PERFORMANCEANDRELIABILITY
lcsh:Technology
01 natural sciences
Article
noise margin fluctuation
law.invention
Computer Science::Hardware Architecture
law
0103 physical sciences
MOSFET
Hardware_INTEGRATEDCIRCUITS
General Materials Science
lcsh:Microscopy
lcsh:QC120-168.85
Electronic circuit
010302 applied physics
timing fluctuation
lcsh:QH201-278.5
lcsh:T
business.industry
CMOS circuit
Transistor
Direct current
aspect ratio of channel cross-section
021001 nanoscience & nanotechnology
DC and AC characteristic fluctuations
Threshold voltage
CMOS
lcsh:TA1-2040
statistical device simulation
nanowire
MOSFETs
power fluctuation
Optoelectronics
lcsh:Descriptive and experimental mechanics
lcsh:Electrical engineering. Electronics. Nuclear engineering
lcsh:Engineering (General). Civil engineering (General)
0210 nano-technology
Alternating current
business
lcsh:TK1-9971
Hardware_LOGICDESIGN
Zdroj: Materials
Materials, Vol 12, Iss 9, p 1492 (2019)
Volume 12
Issue 9
ISSN: 1996-1944
Popis: In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal&ndash
oxide&ndash
semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal&ndash
semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device&rsquo
s nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device&ndash
circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation.
Databáze: OpenAIRE
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