Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits
Autor: | Min Hui Chuang, Pei Jung Chao, Yiming Li, Chieh Yang Chen |
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Rok vydání: | 2019 |
Předmět: |
Materials science
gate-all-around Nanowire work function fluctuation 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY lcsh:Technology 01 natural sciences Article noise margin fluctuation law.invention Computer Science::Hardware Architecture law 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS General Materials Science lcsh:Microscopy lcsh:QC120-168.85 Electronic circuit 010302 applied physics timing fluctuation lcsh:QH201-278.5 lcsh:T business.industry CMOS circuit Transistor Direct current aspect ratio of channel cross-section 021001 nanoscience & nanotechnology DC and AC characteristic fluctuations Threshold voltage CMOS lcsh:TA1-2040 statistical device simulation nanowire MOSFETs power fluctuation Optoelectronics lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) 0210 nano-technology Alternating current business lcsh:TK1-9971 Hardware_LOGICDESIGN |
Zdroj: | Materials Materials, Vol 12, Iss 9, p 1492 (2019) Volume 12 Issue 9 |
ISSN: | 1996-1944 |
Popis: | In this study, we investigate direct current (DC)/alternating current (AC) characteristic variability induced by work function fluctuation (WKF) with respect to different nanosized metal grains and the variation of aspect ratios (ARs) of channel cross-sections on a 10 nm gate gate-all-around (GAA) nanowire (NW) metal&ndash oxide&ndash semiconductor field-effect transistor (MOSFET) device. The associated timing and power fluctuations of the GAA NW complementary metal&ndash semiconductor (CMOS) circuits are further estimated and analyzed simultaneously. The experimentally validated device and circuit simulation running on a parallel computing system are intensively performed while considering the effects of WKF and various ARs to access the device&rsquo s nominal and fluctuated characteristics. To provide the best accuracy of simulation, we herein calibrate the simulation results and experimental data by adjusting the fitting parameters of the mobility model. Transfer characteristics, dynamic timing, and power consumption of the tested circuit are calculated using a mixed device&ndash circuit simulation technique. The timing fluctuation mainly follows the trend of the variation of threshold voltage. The fluctuation terms of power consumption comprising static, short-circuit, and dynamic powers are governed by the trend that the larger the grain size, the larger the fluctuation. |
Databáze: | OpenAIRE |
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