| Autor: |
Cheng, Man-Kit, Liang, Jing, Lai, Ying-Hoi, Pang, Liang-Xi, Liu, Yi, Shen, Junying, Hou, Jianqiang, He, Qing Lin, Xu, Bochao, Chen, Junshu, Wang, Gan, Liu, Chang, Lortz, Rolf, Sou, Iam-Keong |
| Rok vydání: |
2015 |
| Předmět: |
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| DOI: |
10.48550/arxiv.1509.02694 |
| Popis: |
We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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