Ultrafast Switching of SiC MOSFETs for High-Voltage Pulsed-Power Circuits
| Autor: | J. J. van Oorschot, T Tom Huiskamp, M. Azizi |
|---|---|
| Přispěvatelé: | Electrical Energy Systems, Cyber-Physical Systems Center Eindhoven, EIRES Chem. for Sustainable Energy Systems, Power Conversion |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry high-voltage pulsed-power supply High voltage Hardware_PERFORMANCEANDRELIABILITY Pulsed power Condensed Matter Physics Gate-boosting method Capacitance Marx generator chemistry.chemical_compound chemistry Hardware_GENERAL Logic gate MOSFET Silicon carbide Hardware_INTEGRATEDCIRCUITS Optoelectronics business Silicon Carbide (SiC) MOSFET Electronic circuit |
| Zdroj: | IEEE Transactions on Plasma Science, 48(12):9274514, 4262-4272. Institute of Electrical and Electronics Engineers |
| ISSN: | 0093-3813 |
| Popis: | Due to their fast switching capabilities, silicon carbide (SiC) MOSFETs are increasingly used in high-voltage pulsed-power circuits where fast and flexible high-voltage pulses are required (e.g. for plasma-processing applications), such as in our solid-state Impedance-matched Marx generator. The turn-on time of SiC MOSFETs mainly depends on the gate-driving technique and its implementation. Therefore, many studies focus on SiC MOSFET gate-driving methods. In this article, a gate-boosting driving method that was previously proposed for IGBTs is optimized for SiC MOSFETs and applied to a very fast MOSFET to reduce turn-on time as much as possible. A prototype of the optimized gate-boosting driver was built and tested to assess its performance. The test results validate the effectiveness of the optimized gate-driving method and showed that a MOSFET turn-on time of below 2 ns is achievable at a high operating voltage and moderate current and below 3 ns for a wider range of load-current and operating-voltage conditions. Furthermore, current rise rates of 38.7 kA/$\mu \text{s}$ at 356-A load current are possible. All these results are considerably faster than ever demonstrated before. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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