Electrical Characterization of Fabricated pin Diodes made from SixGe1-x-ySny with an Embedded Ge1-xSnx Quantum Well
| Autor: | Caterina J. Clausen, Michael Oehme, D. Schwarz, David Weißhaupt, H. S. Funk, P. Povolni, Joerg Schulze, Yasmine Elogail |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element Germanium 02 engineering and technology Substrate (electronics) 01 natural sciences Semiconductor chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics 020201 artificial intelligence & image processing Direct and indirect band gaps Wafer Tin business Quantum well |
| Zdroj: | 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019) MIPRO |
| Popis: | The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform. The ternary alloy Silicon-Germanium-Tin enables achieving a direct bandgap material made from the indirect semiconductors Silicon, Germanium and Tin. By using a virtual Germanium substrate technology these semiconductors can be integrated on a Silicon wafer. In this paper, we discuss the characterization of grown and fabricated pin-diodes made from the ternary alloy Silicon-Germanium-Tin by using Molecular Beam Epi-taxy technology on a virtual Germanium substrate formed on Silicon(001) wafers. To achieve higher Tin concentrations to enable direct band transitions, a thin Germanium-Tin layer is inserted into the intrinsic region of the pin-diodes resulting in a quantum well. It is shown that these pin-diodes have electrically good characteristics and in particular a low dark current density, which suggest a high crystal-quality. |
| Databáze: | OpenAIRE |
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