Transistor and Circuit Design for 100-200 GHz ICs
| Autor: | Dennis W. Scott, Berinder Brar, C. Kadow, Yingda Dong, San-Liang Lee, C. Nguyen, Mark J. W. Rodwell, N. Nguyen, R.L. Pierson, Petra Rowell, Y. Wei, Z. Griffith, Mattias E. Dahlstrom, Miguel Urteaga, V. Paidi, N. Parthasarathy |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Power gain
Materials science business.industry Circuit design Heterojunction bipolar transistor Amplifier Transistor Electrical engineering Integrated circuit design law.invention emitter regrowth Frequency divider law dielectric side-wall-spacer millimeter-wave amplifier Optoelectronics static frequency divider InP heterojunction bipolar transistor Electrical and Electronic Engineering business collector pedestal Common emitter |
| Zdroj: | Griffith, Zach; Dong, Yingda; Scott, Dennis; Wei, Yun; Parthasarathy, Navin; Dahlstrom, Mattias; et al.(2005). Transistor and Circuit Design for 100-200 GHz ICs. Journal of Solid-State Circuits, 40(10), 2061-2069. doi: 10.1109/JSSC.2005.854609. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/4786087z |
| DOI: | 10.1109/JSSC.2005.854609. |
| Popis: | Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz f/sub /spl tau// and 490 GHz f/sub max/ DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150-GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete with advanced 100-nm SiGe processes, InP HBTs must be similarly scaled and high process yields are imperative. Described are several process modules in development: these include an emitter-base dielectric sidewall spacer for increased yield, a collector pedestal implant for reduced extrinsic C/sub cb/, and emitter junction regrowth for reduced base and emitter resistances. |
| Databáze: | OpenAIRE |
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