Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites
| Autor: | D. Jishiashvili, Greta R. Patzke, Zeinab Shiolashvili, Roman Kontic, Nino Makhatadze |
|---|---|
| Přispěvatelé: | University of Zurich, Patzke, Greta R |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
10120 Department of Chemistry
Materials science Composite number composite materials Nanowire chemistry.chemical_element Nanotechnology Insulator (electricity) 02 engineering and technology Zinc semiconductors gas phase deposition lcsh:Technology 01 natural sciences 7. Clean energy Article chemistry.chemical_compound 0103 physical sciences 540 Chemistry General Materials Science lcsh:Microscopy lcsh:QC120-168.85 010302 applied physics lcsh:QH201-278.5 indium phosphide nanowires hydrazine lcsh:T business.industry 021001 nanoscience & nanotechnology 2500 General Materials Science Amorphous solid Semiconductor Nanoelectronics chemistry Chemical engineering lcsh:TA1-2040 Indium phosphide lcsh:Descriptive and experimental mechanics lcsh:Electrical engineering. Electronics. Nuclear engineering lcsh:Engineering (General). Civil engineering (General) 0210 nano-technology business lcsh:TK1-9971 |
| Zdroj: | Materials Materials; Volume 6; Issue 1; Pages: 85-100 Materials, Vol 6, Iss 1, Pp 85-100 (2012) |
| ISSN: | 1996-1944 |
| Popis: | Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics. |
| Databáze: | OpenAIRE |
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